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1

Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

H. Kalisch, Y. Dikme, G. Gerstenbrandt, A. Alam, A. Szymakowski, H. Klockenhoff, C. Rieckmann, M. Heuken, R.H. Jansen, P. Javorka, M. Marso, A. Fox, P. Kordos, H. Lüth

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 154 KB

english, 2002

2

Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

M. Fieger, Y. Dikme, F. Jessen, H. Kalisch, A. Noculak, A. Szymakowski, P. v. Gemmern, B. Faure, C. Richtarch, F. Letertre, M. Heuken, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

3

Elastic scattering of 6Li by 39K at 28 and 34 MeV

J. Szymakowski, K.W. Kemper, A.D. Frawley

Journal:

Nuclear Physics A

Year:

1981

Language:

english

File:

PDF, 422 KB

english, 1981

4

Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Y. Dikme, P. van Gemmern, Y.C. Lin, A. Szymakowski, H. Kalisch, B. Faure, C. Richtarch, H. Larhèche, P. Bove, F. Letertre, J.F. Woitok, K. Efthimiadis, R.H. Jansen, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

5

Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates

A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, G.P. Yablonskii, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

6

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

G.P. Yablonskii, A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, T.S. Shulga, A.I. Stognij, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 219 KB

english, 2005

7

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

Ch Giesen, A Szymakowski, S Rushworth, M Heuken, K Heime

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 160 KB

english, 2000

8

Si(111) as alternative substrate for AlGaN/GaN HEMT

Y. Dikme, M. Fieger, F. Jessen, A. Szymakowski, H. Kalisch, J. F. Woitok, P. van Gemmern, P. Javorka, M. Marso, N. Kaluza, R. H. Jansen, M. Heuken

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 100 KB

english, 2003

9

Growth studies of GaN and alloys on LiAlO2 by MOVPE

Y. Dikme, P. van Gemmern, B. Chai, D. Hill, A. Szymakowski, H. Kalisch, M. Heuken, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 599 KB

english, 2005

10

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Y. Dikme, M. Fieger, M. Eickelkamp, C. Giesen, E. V. Lutsenko, G. P. Yablonskii, A. Szymakowski, F. O. Jessen, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 1.42 MB

english, 2006

11

Investigation of buffer growth temperatures for MOVPE of GaN on Si(1 1 1)

Y. Dikme, G. Gerstenbrandt, A. Alam, H. Kalisch, A. Szymakowski, M. Fieger, R.H. Jansen, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

12

Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures

G. P. Yablonskii, V. N. Pavlovskii, E. V. Lutsenko, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 284 KB

english, 2004

13

at 40 MeV

Hnizdo, V., Szymakowski, J., Kemper, K. W., Fox, J. D.

Journal:

Physical Review C

Year:

1981

Language:

english

File:

PDF, 319 KB

english, 1981

14

[IEEE IEEE International Symposium on Compound Semiconductors - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors - High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Ryabtsev, A.G., Ryabtsev, G.I., Yablonskii, G.P., Dikme, Y., Szymakowski, A., Kalisch, H., Jansen, R.H., Schineller, B., Heuken, M.

Year:

2003

Language:

english

File:

PDF, 170 KB

english, 2003

15

Scattering and the Folding Model

Hnizdo, V., Kemper, K. W., Szymakowski, J.

Journal:

Physical Review Letters

Year:

1981

Language:

english

File:

PDF, 737 KB

english, 1981

16

SPIE Proceedings [SPIE Integrated Optoelectronics Devices - San Jose, CA (Saturday 25 January 2003)] Light-Emitting Diodes: Research, Manufacturing, and Applications VII - Investigation of GaN on Si(111) for optoelectronic applications

Dikme, Y., Szymakowski, A., Kalisch, H., Lutsenko, E.V, Zubialevich, V.N., Yablonskii, G.P., Chern, H.M., Schaefer, C., Jansen, R., Heuken, Michael, Schubert, E. Fred, Yao, H. Walter, Linden, Kurt J.,

Year:

2003

Language:

english

File:

PDF, 217 KB

english, 2003

17

Student experiences in first-year engineering classrooms – exploring issues of gender in an Australian programme

Lloyd, Natalie Anne, Szymakowski, Jolanta

Journal:

Australasian Journal of Engineering Education

Year:

2017

Language:

english

File:

PDF, 904 KB

english, 2017